inchange semiconductor isc product specification isc n-channel mosfet transistor IRF630A description drain current ?i d =9a@ t c =25 drain source voltage- : v dss = 200v(min) static drain-source on-resistance : r ds(on) = 0.4 (max) fast switching speed low drive requirement applications this device is n-channel, enhanc ement mode, power mosfet designed especially for high powe r, high speed applications, such as switching power supplies,ups, ac and dc motor con- trols, relay and solenoid drivers and high energy pulse circuits. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 200 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 9 a p tot total dissipation@tc=25 72 w t j max. operating junc tion temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.74 /w r th j-a thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc n-channel mosfet transistor IRF630A electrical characteristics (t =25 c ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 200 v v gs(th) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds(on) drain-source on-stage resistance v gs = 10v; i d = 4.5a 0.4 i gss gate source leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 200v; v gs = 0 10 ua v sd diode forward voltage i f =9a; v gs = 0 1.5 v isc website www.iscsemi.cn
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